Numerical modelling of mechanisms involved in latchup triggering by a laser beam

被引：6

作者：

Fouillat, P ^{[1
]}

Lapuyade, H ^{[1
]}

Touboul, A ^{[1
]}

Dom, JP ^{[1
]}

Gaillard, R ^{[1
]}

机构：

[1] NUCLETUD SA,ZA COURTABOEUF,F-91944 LES ULIS,FRANCE

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 03期

关键词：

D O I：

10.1109/23.510738

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of a laser beam is a will-known technique to trigger latchup parasitic structures in ICs. Numerical analyses of this phenomenon are brought into play to study its sensitivity when a continuous wave laser as well as pulsed lasers are used. The impact location is also studied to demonstrate that different mechanisms are involved in the triggering phase of latchup. The structure is also more sensitive to the blue light when it is directed over the well-substrate junction while it is more sensitive to infrared light elsewhere. When using a CW laser, the curves giving the power supply current versus the photo-induced current provide direct information on the parameters of the parasitic structure.

引用

页码：944 / 951

页数：8

共 13 条

[1] A PRACTICAL HIGH-LATCHUP IMMUNITY DESIGN METHODOLOGY FOR INTERNAL CIRCUITS IN THE STANDARD CELL-BASED CMOS/BICMOS LSIS [J].