DYNAMICS OF HEAVY-ION-INDUCED LATCHUP IN CMOS STRUCTURES

被引:29
作者
AOKI, T
机构
[1] NTT, Atsugi, Jpn
关键词
CMOS INTEGRATED CIRCUITS - GUARD BANDS - HEAVY-ION-INDUCED LATCHUP - TRANSISTOR DECOUPLING - TWO DIMENSIONAL TRANSIENT DEVICE SIMULATOR;
D O I
10.1109/16.7401
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1885 / 1891
页数:7
相关论文
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