DYNAMICS OF HEAVY-ION-INDUCED LATCHUP IN CMOS STRUCTURES

被引：29

作者：

AOKI, T

机构：

[1] NTT, Atsugi, Jpn

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 11期

关键词：

CMOS INTEGRATED CIRCUITS - GUARD BANDS - HEAVY-ION-INDUCED LATCHUP - TRANSISTOR DECOUPLING - TWO DIMENSIONAL TRANSIENT DEVICE SIMULATOR;

D O I：

10.1109/16.7401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1885 / 1891

页数：7

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