PULSED LASER-INDUCED SEU IN INTEGRATED-CIRCUITS - A PRACTICAL METHOD FOR HARDNESS ASSURANCE TESTING

被引：44

作者：

BUCHNER, S

KANG, K

STAPOR, WJ

CAMPBELL, AB

KNUDSON, AR

MCDONALD, P

RIVET, S

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] HARRIS SEMICOND CORP,MELBOURNE,FL 32302

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 06期

关键词：

D O I：

10.1109/23.101196

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have used a pulsed picosecond laser to measure the threshold for single event upset (SEU) and single event latchup (SEL) for two different kinds of integrated circuits. The relative thresholds show good agreement with published ion upset data. The consistency of the results together with the advantages of using a laser system suggest that the pulsed laser can be used for SEU/SEL hardness assurance of integrated circuits. © 1990 IEEE

引用

收藏

页码：1825 / 1831

页数：7

相关论文

共 9 条

[1] CHARGE COLLECTION FROM FOCUSED PICOSECOND LASER-PULSES [J].

BUCHNER, S ;

KNUDSON, A ;

KANG, K ;

CAMPBELL, AB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1517-1522

[2] LASER SIMULATION OF SINGLE EVENT UPSETS [J].

BUCHNER, SP ;

WILSON, D ;

KANG, K ;

GILL, D ;

MAZER, JA ;

RABURN, WD ;

CAMPBELL, AB ;

KNUDSON, AR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1228-1233

[3] TRANSIENT RADIATION EFFECTS IN GAAS DEVICES - BULK CONDUCTION AND CHANNEL MODULATION PHENOMENA IN D-MESFET, E-JFET, AND N+-SI-N+ STRUCTURES [J].

FLESNER, LD .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1502-1507

[4] HEAVY ION-INDUCED SINGLE EVENT UPSETS OF MICROCIRCUITS - A SUMMARY OF THE AEROSPACE CORPORATION TEST DATA [J].

KOGA, R ;

KOLASINSKI, WA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1190-1195

[5]

MARTIN RC, 1987, IEEE T NUCL SCI, V34, P1307

[6]

ROSS A, 1989, IEEE T NUCL SCI, V36, P2318

[7] CHARGE COLLECTION IN SILICON FOR IONS OF DIFFERENT ENERGY BUT SAME LINEAR ENERGY-TRANSFER (LET) [J].

STAPOR, WJ ;

MCDONALD, PT ;

KNUDSON, AR ;

CAMPBELL, AB ;

GLAGOLA, BG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1585-1590

[8]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[9] ALPHA-INDUCED, BORON-INDUCED, SILICON-INDUCED AND IRON-INDUCED ION-INDUCED CURRENT TRANSIENTS IN LOW-CAPACITANCE SILICON AND GAAS DIODES [J].

WAGNER, RS ;

BORDES, N ;

BRADLEY, JM ;

MAGGIORE, CJ ;

KNUDSON, AR ;

CAMPBELL, AB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1578-1584