Synthesis of silicon nanowires using laser ablation method and their manipulation by electron beam

被引：37

作者：

Fukata, N

Oshima, T

Tsurui, T

Ito, S

Murakami, K

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Univ Tsukuba, Special Res Project Nanosci, Tsukuba, Ibaraki 3058573, Japan

[3] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan

[4] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan

来源：

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS | 2005年 / 6卷 / 06期

关键词：

silicon nanowires; laser ablation; scanning electron microscope;

D O I：

10.1016/j.stam.2005.06.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Size control of silicon nanowires (SiNWs) synthesized by laser ablation of a Si target with iron or nickel as catalysts were investigated by changing the synthesis parameters such as the content of catalyst in targets and laser power during synthesis. The diameter and length of SiNWs significantly depended on the synthesis parameters, i.e. the size of SiNWs can be controlled by the synthesis parameters. Manipulation of SiNWs was also performed during the observation of scanning electron microscope. By changing the degree of charge-up for free-standing adjacent intertwined SiNWs at an edge of Si substrate, the distance and speed of opening motion of them can be controlled. This motion is probably caused by the Coulomb repulsive interaction between them. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：628 / 632

页数：5

共 16 条

[1] Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].