Synthesis of silicon nanowires using laser ablation method and their manipulation by electron beam

被引:37
作者
Fukata, N
Oshima, T
Tsurui, T
Ito, S
Murakami, K
机构
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[2] Univ Tsukuba, Special Res Project Nanosci, Tsukuba, Ibaraki 3058573, Japan
[3] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan
[4] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
关键词
silicon nanowires; laser ablation; scanning electron microscope;
D O I
10.1016/j.stam.2005.06.015
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Size control of silicon nanowires (SiNWs) synthesized by laser ablation of a Si target with iron or nickel as catalysts were investigated by changing the synthesis parameters such as the content of catalyst in targets and laser power during synthesis. The diameter and length of SiNWs significantly depended on the synthesis parameters, i.e. the size of SiNWs can be controlled by the synthesis parameters. Manipulation of SiNWs was also performed during the observation of scanning electron microscope. By changing the degree of charge-up for free-standing adjacent intertwined SiNWs at an edge of Si substrate, the distance and speed of opening motion of them can be controlled. This motion is probably caused by the Coulomb repulsive interaction between them. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:628 / 632
页数:5
相关论文
共 16 条
[11]   VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH ( NEW METHOD GROWTH CATALYSIS FROM IMPURITY WHISKER EPITAXIAL + LARGE CRYSTALS SI E ) [J].
WAGNER, RS ;
ELLIS, WC .
APPLIED PHYSICS LETTERS, 1964, 4 (05) :89-&
[12]   Highly polarized photoluminescence and photodetection from single indium phosphide nanowires [J].
Wang, JF ;
Gudiksen, MS ;
Duan, XF ;
Cui, Y ;
Lieber, CM .
SCIENCE, 2001, 293 (5534) :1455-1457
[13]   Control of the size and position of silicon nanowires grown via the vapor-liquid-solid technique [J].
Westwater, J ;
Gosain, DP ;
Usui, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (10) :6204-6209
[14]   Direct evidence of quantum confinement from the size dependence of the photoluminescence of silicon quantum wires [J].
Yu, DP ;
Bai, ZG ;
Wang, JJ ;
Zou, YH ;
Qian, W ;
Fu, JS ;
Zhang, HZ ;
Ding, Y ;
Xiong, GC ;
You, LP ;
Xu, J ;
Feng, SQ .
PHYSICAL REVIEW B, 1999, 59 (04) :R2498-R2501
[15]   Silicon nanowires prepared by laser ablation at high temperature [J].
Zhang, YF ;
Tang, YH ;
Wang, N ;
Yu, DP ;
Lee, CS ;
Bello, I ;
Lee, ST .
APPLIED PHYSICS LETTERS, 1998, 72 (15) :1835-1837
[16]   Quantum confinement and electronic properties of silicon nanowires [J].
Zhao, XY ;
Wei, CM ;
Yang, L ;
Chou, MY .
PHYSICAL REVIEW LETTERS, 2004, 92 (23) :236805-1