Quantum confinement and electronic properties of silicon nanowires

被引：471

作者：

Zhao, XY ^{[1
]}

Wei, CM

Yang, L

Chou, MY

机构：

[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[2] Acad Sinica, Inst Phys, Taipei 11529, Taiwan

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 23期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.92.236805

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigate the structural, electronic, and optical properties of hydrogen-passivated silicon nanowires along [110] and [111] directions with diameter d up to 4.2 nm from first principles. The size and orientation dependence of the band gap is investigated and the local-density gap is corrected with the GW approximation. Quantum confinement becomes significant for d<2.2 nm, where the dielectric function exhibits strong anisotropy and new low-energy absorption peaks start to appear in the imaginary part of the dielectric function for polarization along the wire axis.

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页码：236805 / 1

页数：4

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