High resolution x-ray diffraction and scattering measurement of the interfacial structure of ZnTe/GaSb epilayers

The surface and interface structures of ZnTe epilayers grown by molecular beam epitaxy on GaSb (001) substrates under different conditions have been investigated by high resolution x-ray diffraction and grazing incidence scattering. Reciprocal space mapping around the symmetrical diffraction reciprocal point 004 and asymmetrical diffraction point (115) over bar showed that the ZnTe epilayers, in the samples investigated, were fully strained to the substrate, The crystalline quality of the ZnTe epilayer grown on a substrate annealed in a Zn flux was very good, while evidence for an interfacial layer, of thickness varying from 2-20 nm, was found when the substrate was annealed in a Te flux prior to growth. This is attributed to Ga2Te3 formation at the interface. The interfacial layer roughens the interface and surface, and both crystal truncation rod measurements and grazing incidence x-ray reflectivity show the surface roughness to be about 4 nm. Such a rough surface and interface is also inferred from the broader distribution along the transverse direction in reciprocal space maps, A shorter lateral correlation length is found for the roughness of the sample containing the interfacial layer. The disappearance of interference fringes is attributed to nonuniformity of the interfacial layer. (C) 1997 American Institute of Physics.