Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy

被引：142

作者：

Cerutti, L.

Ristic, J.

Fernandez-Garrido, S.

Calleja, E.

Trampert, A.

Ploog, K. H.

Lazic, S.

Calleja, J. M.

机构：

[1] Univ Politecn Madrid, ISOM, E-28040 Madrid, Spain

[2] Univ Politecn Madrid, Dept Ingn Electron, ETSI Telecomun, E-28040 Madrid, Spain

[3] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[4] Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 21期

关键词：

D O I：

10.1063/1.2204836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Wurtzite single crystal GaN nanocolumns were grown by plasma-assisted molecular beam epitaxy on bare Si(001) substrates. Nanocolumns with diameters in the range of 20-40 nm have no traces of extended defects and they grow aligned along the [0001] direction. Photoluminescence measurements in nanocolumns evidence a very high crystal quality in terms of intense and narrow excitonic emissions. Raman scattering data show that the nanocolumns are strain-free. These results open the way to an efficient integration of optoelectronic devices with the complementary metal oxide semiconductor technology. (c) 2006 American Institute of Physics.

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