High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular-beam epitaxy

被引：30

作者：

Joblot, S

Semond, F

Cordier, Y

Lorenzini, P

Massies, J

机构：

[1] STMicroelect, F-38926 Crolles, France

[2] CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 13期

关键词：

D O I：

10.1063/1.2067698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of AlGaN/GaN heterostructure on Si (001) substrates by molecular-beam epitaxy using ammonia as nitrogen precursor is reported. The structural, optical, and electrical properties of such heterostructures are assessed. It is shown that a two-dimensional electron gas is formed at the Al0.23Ga0.77N/GaN interface. This type of heterostructure exhibits a sheet carrier density of 4.2x10(12) cm(-2) with a mobility of 730 cm(2)/V s at room temperature. Preliminary results concerning high-electron-mobility-transistor static characteristics are presented. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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