12 W/mm AlGaN-GaNHFETs on silicon substrates

被引：184

作者：

Johnson, JW ^{[1
]}

Piner, EL ^{[1
]}

Therrien, R ^{[1
]}

Rajagopal, P ^{[1
]}

Roberts, JC ^{[1
]}

Brown, JD ^{[1
]}

Singhal, S ^{[1
]}

Linthicum, KJ ^{[1
]}

机构：

[1] Nitronex Corp, Raleigh, NC 27606 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 07期

关键词：

GaN; heterojunction field-effect transistor (HFET); high electron mobility transistor (HEMT); power density; silicon;

D O I：

10.1109/LED.2004.831190

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al0.26Ga0.74N-GaN heterojunction field-effect transistors were grown by metal-organic chemical vapor deposition on high-resistivity 100-mm Si (111) substrates. Van der Pauw sheet resistance of the two-dimensional electron gas was 300 Omega/square with a standard deviation of 10 Omega/square. Maximum drain current density of similar to1 A/mm was achieved with a three-terminal breakdown voltage of similar to200 V. The cutoff frequency and maximum frequency of oscillation were 18 and 31 GHz, respectively, for 0.7-mum gate-length devices. When biased at 50 N, a 2.14-GHz continuous wave power density of 12 W/mm was achieved with associated large-signal gain of 15.3 dB and a power-added efficiency of 52.7%. This is the highest power density ever reported from a GaN-based device grown on a silicon substrate, and is competitive with the best results obtained from conventional device designs on any substrate.

引用

页码：459 / 461

页数：3

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