12W/mm power density AlGaN/GaN HEMTs on sapphire substrate

被引：78

作者：

Chini, A ^{[1
]}

Buttari, D ^{[1
]}

Coffie, R ^{[1
]}

Heikman, S ^{[1
]}

Keller, S ^{[1
]}

Mishra, UK ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 01期

关键词：

D O I：

10.1049/el:20040017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Record power performance at 4 GHz has been obtained using field-plated AlGaN/GaN HEMTs on sapphire substrate. High power density (12 W/mm) as well as high efficiency (58%) have been measured. A comparison between devices with and without field plate on the same sample showed a significant reduction in knee-voltage walk-out for the field-plated device, thus enabling high power and efficiency operation.

引用

页码：73 / 74

页数：2

共 5 条

[1] 10-W/mm AlGaN-GaNHFET with a field modulating plate [J].

Ando, Y ;

Okamoto, Y ;

Miyamoto, H ;

Nakayama, T ;

Inoue, T ;

Kuzuhara, M .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (05) :289-291

[2] Novel high power AlGaAs/GaAs HFET with a field-modulating plate operated at 35V drain voltage [J].

Asano, K ;

Miyoshi, Y ;

Ishikura, K ;

Nashimoto, Y ;

Kuzuhara, M ;

Mizuta, M .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :59-62

[3] 2.1 A/mm current density AlGaN/GaN HEMT [J].

Chini, A ;

Coffie, R ;

Meneghesso, G ;

Zanoni, E ;

Buttari, D ;

Heikman, S ;

Keller, S ;

Mishra, UK .

ELECTRONICS LETTERS, 2003, 39 (07) :625-626

[4] AlGaN/GaN HEMTs - An overview of device operation and applications [J].

Mishra, UK ;

Parikh, P ;

Wu, YF .

PROCEEDINGS OF THE IEEE, 2002, 90 (06) :1022-1031

[5] The impact of surface states on the DC and RF characteristics of A1GaN/GaN HFETs [J].

Vetury, R ;

Zhang, NQQ ;

Keller, S ;

Mishra, UK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :560-566

← 1 →