2.1 A/mm current density AlGaN/GaN HEMT

被引：30

作者：

Chini, A

Coffie, R

Meneghesso, G

Zanoni, E

Buttari, D

Heikman, S

Keller, S

Mishra, UK

机构：

[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

[2] Univ Padua, INFM, I-35131 Padua, Italy

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 07期

关键词：

D O I：

10.1049/el:20030382

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical performances of high current density AlGaN/GaN HEMTs are reported. 2 x 75 mum x 0.7 mum devices grown on sapphire substrate showed current densities up to 2.1 A/mm under 200 as pulse condition. RF power measurements at 8 GHz and V-DS = 15 V exhibited a saturated output power of 3.66 W/mm with a 47.8% peak PAE.

引用

页码：625 / 626

页数：2

共 5 条

[1] The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's [J].