AlGaN/GaN HEMTs on Si(111) with 6.6 W/mm output power density

被引：63

作者：

Behtash, R

Tobler, H

Neuburger, M

Schurr, A

Leier, H

Cordier, Y

Semond, F

Natali, F

Massies, J

机构：

[1] DaimlerChrysler AG, Res & Technol, D-89013 Ulm, Germany

[2] Univ Ulm, Dept Electron Devices & Circuits, Ulm, Germany

[3] CNRS, CRHEA, F-06560 Valbonne, France

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 07期

关键词：

D O I：

10.1049/el:20030395

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al0.27Ga0.73N/GaN HEMTS have been realised on resistive S(111) substrates. The epitaxial structure was grown by MBE yielding a channel mobility of 1440 cm(2)/Vs (room temperature) and a sheet carrier density of 9.6c12 cm(-2). Large signal evaluation of transistors with gate length of 0.25 mum and gate width of 2 x 125 mum yields up to 1.65 W CW output power at 2 GHz corresponding to a power density of 6.6 W/mm. These results arc thought to represent the highest output power density so far achieved for GaN-based HEMTs on silicon substrates.

引用

页码：626 / 628

页数：3

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