Spin susceptibility of a two-dimensional electron system in GaAs towards the weak interaction region

被引:23
作者
Tan, YW [1 ]
Zhu, J
Stormer, HL
Pfeiffer, LN
Baldwin, KW
West, KW
机构
[1] Columbia Univ, Dept Phys, New York, NY 10027 USA
[2] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA
[3] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
来源
PHYSICAL REVIEW B | 2006年 / 73卷 / 04期
关键词
D O I
10.1103/PhysRevB.73.045334
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We determine the spin susceptibility chi in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs/AlGaAs heterostructure. The band structure effects, modifying mass and g-factor, are carefully taken into accounts since they become appreciable for the large electron densities of the weak interaction regime. When properly normalized, chi decreases monotonically from 3 to 1.1 with increasing density over our experimental range from 0.1 to 4x10(11) cm(-2). In the high density limit, chi tends correctly towards chi -> 1 and compare well with recent theory.
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页数:5
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