High-performance fully-depleted SOI RF CMOS

被引：25

作者：

Chen, CL

Spector, SJ

Blumgold, RM

Neidhard, RA

Beard, WT

Yost, DR

Knecht, JM

Chen, CK

Fritze, M

Cerny, CL

Cook, JA

Wyatt, PW

Keast, CL

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

[2] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 01期

关键词：

CMOS; fully-depleted SOI; low-noise Si MOSFET; microwave MOSFET; microwave T-gate FET; silicon-on-insulator; SOI;

D O I：

10.1109/55.974810

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

T-gate structure has been implemented in the fabrication of fully depleted silicon-on-insulator MOSFETs. The T-gate process is fully compatible with the standard CMOS and the resulting reduction of gate-resistance significantly improved the RF performance. Measured f(max) is 76 GHz and 63 GHz for n- and p-MOSFET with 0.2-mum gate length, respectively. At 2 GHz, a minimum noise figure of 0.4 dB was measured on an n-MOSFET with the T-gate structure.

引用

页码：52 / 54

页数：3

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