RF potential of a 0.18-μm CMOS logic device technology

被引：56

作者：

Burghartz, JN ^{[1
]}

Hargrove, M

Webster, CS

Groves, RA

Keene, M

Jenkins, KA

Logan, R

Nowak, E

机构：

[1] Delft Univ Technol, DIMES, NL-2600 GB Delft, Netherlands

[2] IBM Microelect Div, Hopewell Jct, NY 12533 USA

[3] IBM Microelect Div, Essex Jct, VT 05452 USA

[4] IBM Corp, TJ Watson Res Ctr, Hopewell Jct, NY 12533 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 04期

关键词：

CMOS FET's; CMOS power amplifiers; HF receivers; HF radio communication; HF transmitters; impedance matching; microwave devices; microwave FET's; microwave receivers; microwave transmitters; MOS devices; MOSFET's semiconductor device breakdown; semiconductor device noise; semiconductor devices;

D O I：

10.1109/16.831006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The radio-frequency (rf) performance of a 0.18-mu m CMOS logic technology is assessed by evaluating the cutoff and maximum oscillation frequencies (f(T) and f(max)), the minimum noise figure (F(min)) and associated power gain (G(alpha)), and the 1/f-noise of the devices, Gate-biasing and channel-length and gate-finger-length adjustments are identified as means to optimize the rf performance without any technology process modifications, Changing to N(2)O gate dielectrics is shown to greatly reduce the 1/f noise without sacrificing the ac performance. The power amplifier characteristics of CMOS at low power levels are also discussed.

引用

页码：864 / 870

页数：7

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