Integrated RF components in a SiGe bipolar technology

被引：43

作者：

Burghartz, JN ^{[1
]}

Soyuer, M ^{[1
]}

Jenkins, KA ^{[1
]}

Kies, M ^{[1
]}

Dolan, M ^{[1
]}

Stein, KJ ^{[1
]}

Malinowski, J ^{[1
]}

Harame, DL ^{[1
]}

机构：

[1] IBM CORP, SEMICOND RES & DEV CTR, HOPEWELL JCT, NY 12533 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1997年 / 32卷 / 09期

关键词：

bandpass filters; capacitors; inductors; microwave devices; microwave integrated circuits; semiconductor device metallization; varactors;

D O I：

10.1109/4.628759

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several components for the design of monolithic RF transceivers on silicon substrates are presented and discussed, They are integrated in a manufacturable analog SiGe bipolar technology without any significant process alterations, Spiral inductors have inductance values in the range of similar to 0.15-80 nH with typical maximum quality-factors (Q(max)) of 3-20, The Q(max's) are highest if the doping concentration under the inductors is kept minimum, It is shown that the inductor area is an important parameter toward optimization of Q(max) at a given frequency, The inductors can be represented in circuit design by a simple lumped-element model, MOS capacitors have Q's of similar to 20/f (GHz)/C(pF), metal-insulator-metal (MIM) capacitors reach Q's of similar to 80/f(GHz)/C(pF), and varactors with a 40% tuning range have Q's of similar to 70/f(GHz)/C(pF). Those devices can be modeled by using lumped elements as well, The accuracy of the modeling is verified by comparing the simulated and the measured high-frequency characteristics of a fully integrated, passive-element bandpass filter.

引用

页码：1440 / 1445

页数：6

共 21 条

[1] ASHBY KB, 1994, PROCEEDINGS OF THE 1994 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, P179, DOI 10.1109/BIPOL.1994.587889
[2] BAHL I, MICOWAVE SOLID STATE
[3] Integrated RF and microwave components in BiCMOS technology
Burghartz, JN
Soyuer, M
Jenkins, KA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) : 1559 - 1570
[4] Microwave inductors and capacitors in standard multilevel interconnect silicon technology
Burghartz, JN
Soyuer, M
Jenkins, KA
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1996, 44 (01) : 100 - 104
[5] Monolithic spiral inductors fabricated using a VLSI Cu-damascene interconnect technology and low-loss substrates
Burghartz, JN
Edelstein, DC
Jenkins, KA
Jahnes, C
Uzoh, C
OSullivan, EJ
Chan, KK
Soyuer, M
Roper, P
Cordes, S
[J]. IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 99 - 102
[6] BURGHARTZ JN, 1993, 1993 P BCTM, P55
[7] Comfort J. H., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P21, DOI 10.1109/IEDM.1990.237235
[8] Crabbe E. F., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P83, DOI 10.1109/IEDM.1993.347393
[9] Halasz GS, 1995, P IEEE, V83, P20
[10] HARAME DL, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P437, DOI 10.1109/IEDM.1994.383374

← 1 2 3 →