Integrated RF components in a SiGe bipolar technology

被引：43

作者：

Burghartz, JN ^{[1
]}

Soyuer, M ^{[1
]}

Jenkins, KA ^{[1
]}

Kies, M ^{[1
]}

Dolan, M ^{[1
]}

Stein, KJ ^{[1
]}

Malinowski, J ^{[1
]}

Harame, DL ^{[1
]}

机构：

[1] IBM CORP, SEMICOND RES & DEV CTR, HOPEWELL JCT, NY 12533 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1997年 / 32卷 / 09期

关键词：

bandpass filters; capacitors; inductors; microwave devices; microwave integrated circuits; semiconductor device metallization; varactors;

D O I：

10.1109/4.628759

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several components for the design of monolithic RF transceivers on silicon substrates are presented and discussed, They are integrated in a manufacturable analog SiGe bipolar technology without any significant process alterations, Spiral inductors have inductance values in the range of similar to 0.15-80 nH with typical maximum quality-factors (Q(max)) of 3-20, The Q(max's) are highest if the doping concentration under the inductors is kept minimum, It is shown that the inductor area is an important parameter toward optimization of Q(max) at a given frequency, The inductors can be represented in circuit design by a simple lumped-element model, MOS capacitors have Q's of similar to 20/f (GHz)/C(pF), metal-insulator-metal (MIM) capacitors reach Q's of similar to 80/f(GHz)/C(pF), and varactors with a 40% tuning range have Q's of similar to 70/f(GHz)/C(pF). Those devices can be modeled by using lumped elements as well, The accuracy of the modeling is verified by comparing the simulated and the measured high-frequency characteristics of a fully integrated, passive-element bandpass filter.

引用

页码：1440 / 1445

页数：6

共 21 条

[11] Modeling, characterization and design of monolithic inductors for silicon RFICs
Long, JR
Copeland, MA
[J]. PROCEEDINGS OF THE IEEE 1996 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 1996, : 185 - 188
[12] SI IC-COMPATIBLE INDUCTORS AND LC PASSIVE FILTERS
NGUYEN, NM
MEYER, RG
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1990, 25 (04) : 1028 - 1031
[13] SUB-20 PS ECL CIRCUITS WITH HIGH-PERFORMANCE SUPER SELF-ALIGNED SELECTIVELY GROWN SIGE BASE (SSSB) BIPOLAR-TRANSISTORS
SATO, F
HASHIMOTO, T
TATSUMI, T
TASHIRO, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (03) : 483 - 488
[14] Sato F, 1995, PROCEEDINGS OF THE 1995 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, P82, DOI 10.1109/BIPOL.1995.493872
[15] Physical modeling of lateral scaling in bipolar transistors
Schroter, M
Walkey, DJ
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1996, 31 (10) : 1484 - 1492
[16] SCHUPPEN A, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P377, DOI 10.1109/IEDM.1994.383388
[17] SiGe-technology and components for mobile communication systems
Schuppen, A
Dietrich, H
Gerlach, S
Hohnemann, H
Arndt, J
Seiler, U
Gotzfried, R
Erben, U
Schumacher, H
[J]. PROCEEDINGS OF THE 1996 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1996, : 130 - 133
[18] An 11-GHz 3-V SiGe voltage-controlled oscillator with integrated resonator
Soyuer, M
Burghartz, J
Ainspan, H
Jenkins, K
Xiao, P
Shahani, A
Dolan, M
Harame, D
[J]. PROCEEDINGS OF THE 1996 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1996, : 169 - 172
[19] SOYUER M, 1988, THESIS U CAL BEKELEY
[20] SILICON BIPOLAR DEVICE STRUCTURES FOR DIGITAL APPLICATIONS - TECHNOLOGY TRENDS AND FUTURE-DIRECTIONS
WARNOCK, JD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (03) : 377 - 389

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