High-frequency characterization of sub-0.25-μm fully depleted silicon-on-insulator MOSFETs

被引：9

作者：

Chen, CL ^{[1
]}

Mathews, RH ^{[1
]}

Burns, JA ^{[1
]}

Wyatt, PW ^{[1
]}

Yost, DR ^{[1
]}

Chen, CK ^{[1
]}

Fritze, M ^{[1
]}

Knecht, JM ^{[1
]}

Suntharalingam, V ^{[1
]}

Soares, A ^{[1
]}

Keast, CL ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 10期

关键词：

CMOS; microwave field effect transistors; MOSFET; silicon on insulator; SIMOX;

D O I：

10.1109/55.870613

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A cutoff frequency, f(T), of 85 GHz was measured on a fully-depleted silicon-on-insulator (FDSOI) n-MOSFET with a gate length of 0.15 mu m. The p-MOSFET with 0.22-mu m gate length has an f(T) of 42 GHz. The high-frequency equivalent circuits were derived from scattering parameters for MOSFETs with various gate lengths. The effects of gate Length and other device parameters on the performance of FDSOI MOSFETs at RF are discussed.

引用

页码：497 / 499

页数：3

共 11 条

[1]

Burghartz J. N., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P853, DOI 10.1109/IEDM.1999.824283

[2] SOI for digital CMOS VLSI: Design considerations and advances [J].

Chuang, CT ;

Lu, PF ;

Anderson, CJ .

PROCEEDINGS OF THE IEEE, 1998, 86 (04) :689-720

[3] Fully-depleted SOI CMOS for analog applications [J].

Colinge, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (05) :1010-1016

[4] High-frequency performances of a partially depleted 0.18-μm SOI/CMOS technology at low supply voltage -: Influence of parasitic elements [J].

Ferlet-Cavrois, V ;

Marcandella, C ;

Musseau, O ;

Leray, JL ;

Pelloie, JL ;

Martin, F ;

Kolev, S ;

Pasquet, D .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (07) :265-267

[5]

Freeman G., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P569, DOI 10.1109/IEDM.1999.824218

[6]

Jin WH, 1999, PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON COMPUTER AIDED DESIGN & COMPUTER GRAPHICS, P16

[7]

Morifuji E., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P649, DOI 10.1109/IEDM.1999.824236

[8]

Rathman DD, 1999, IEEE MTT-S, P577, DOI 10.1109/MWSYM.1999.779828

[9]

ROZEAU O, 1999, P IEEE INT SOI C, P22

[10] 0.15-μm RF CMOS technology compatible with logic CMOS for low-voltage operation [J].

Saito, M ;

Ono, M ;

Fujimoto, R ;

Tanimoto, H ;

Ito, N ;

Yoshitomi, T ;

Ohguro, T ;

Momose, HS ;

Iwai, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (03) :737-742

← 1 2 →