Reduction of gate current in AlSb/InAs HEMTs using a dual-gate design

被引：4

作者：

Boos, JB ^{[1
]}

Kruppa, W ^{[1
]}

Park, D ^{[1
]}

机构：

[1] SFA INC, LANDOVER, MD 20785 USA

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 17期

关键词：

high electron mobility transistors; impact ionisation;

D O I：

10.1049/el:19961088

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dual-gate AlSb/InAs HEMTs with 0.4 mu m gate lengths have been fabricated, and exhibit a significant reduction in the gate leakage current associated with holes generated by impact ionisation. These HEMTs also have decreased output conductance and increased low frequency unilateral gain compared to single gate devices.

引用

页码：1624 / 1625

页数：2

共 3 条

[1] 0.2-MU-M ALSB/INAS HEMTS WITH 5V GATE BREAKDOWN VOLTAGE [J].