Synchrotron x-ray microdiffraction diagnostics of multilayer optoelectronic devices

被引：35

作者：

Cai, ZH

Rodrigues, W

Ilinski, P

Legnini, D

Lai, B

Yun, W

Isaacs, ED

Lutterodt, KE

Grenko, J

Glew, R

Sputz, S

Vandenberg, J

People, R

Alam, MA

Hybertsen, M

Ketelsen, LJP

机构：

[1] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

[2] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 01期

关键词：

D O I：

10.1063/1.124288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Synchrotron-based x-ray microbeam techniques have been used to map crystallographic strain and multilayer thickness in micro-optoelectronic devices produced with the selective area growth technique. Our main results show that growth enhancements in InGaAsP multilayer device material are different for well and barrier material. Comparison with a vapor-phase model for selective area growth suggests that this difference is due to different vapor-phase incorporation rates for the group III metals. (C) 1999 American Institute of Physics. [S0003-6951(99)03927-3].

引用

页码：100 / 102

页数：3

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