Texture development of non-epitaxial polycrystalline ZnO films

被引:129
作者
Kajikawa, Y [1 ]
机构
[1] Univ Tokyo, Sch Engn, Inst Engn Innovat, Bunkyo Ku, Tokyo 1138656, Japan
关键词
morphology; texture; sputtering; ZnO; preferred orientation; surface texture;
D O I
10.1016/j.jcrysgro.2005.11.089
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Preferred orientation and related film morphology of ZnO films have been extensively studied over the last decades. The aim of this paper is conducting a comprehensive survey to organize the information of previous works and to summarize the current status Of research. We first collected reported experimental results concerning the relation between operating conditions and preferred orientation. Ion flux, gas composition, and substrate temperature were main factors to control preferred orientation. Then, we collected proposed models. Preferential nucleation, sticking, surface diffusion, grain growth were considered as major phenomena determining preferred orientation. Finally, we discussed the origin of preferred orientation of polycrystalline ZnO films. Unfortunately, the lack of kinetic data such as sticking probability of precursors onto each crystallographic plane and uncertainty of data such as surface energy hampers us to draw a determinate conclusion. But this survey is expected to play a starting point for further elucidation of the mechanism underlying preferred orientation. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:387 / 394
页数:8
相关论文
共 107 条
[31]  
2-H
[32]   THE EFFECTS OF DEPOSITION RATE ON THE STRUCTURAL AND ELECTRICAL-PROPERTIES OF ZNO-AL FILMS DEPOSITED ON (1120) ORIENTED SAPPHIRE SUBSTRATES [J].
IGASAKI, Y ;
SAITO, H .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) :3613-3619
[33]   Control of preferential orientation of AlN films prepared by the reactive sputtering method [J].
Ishihara, M ;
Li, SJ ;
Yumoto, H ;
Akashi, K ;
Ide, Y .
THIN SOLID FILMS, 1998, 316 (1-2) :152-157
[34]   GROWTH-MODEL OF TETRAPOD ZINC-OXIDE PARTICLES [J].
IWANAGA, H ;
FUJII, M ;
TAKEUCHI, S .
JOURNAL OF CRYSTAL GROWTH, 1993, 134 (3-4) :275-280
[35]   CRYSTAL-GROWTH IN C DIRECTION AND CRYSTALLOGRAPHIC POLARITY IN ZNO CRYSTALS [J].
IWANAGA, H ;
SHIBATA, N ;
NITTONO, O ;
KASUGA, M .
JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :228-232
[36]   Manufacture of specific structure of aluminum-doped zinc oxide films by patterning the substrate surface [J].
Jiang, X ;
Jia, CL ;
Szyszka, B .
APPLIED PHYSICS LETTERS, 2002, 80 (17) :3090-3092
[37]   TRANSLATIONALLY ACTIVATED DISSOCIATIVE CHEMISORPTION OF SIH4 ON THE SI(100) AND SI(111) SURFACES [J].
JONES, ME ;
XIA, LQ ;
MAITY, N ;
ENGSTROM, JR .
CHEMICAL PHYSICS LETTERS, 1994, 229 (4-5) :401-407
[38]   Use of process indices for simplification of the description of vapor deposition systems [J].
Kajikawa, Y ;
Noda, S ;
Komiyama, H .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 111 (2-3) :156-163
[39]   Comprehensive perspective on the mechanism of preferred orientation in reactive-sputter-deposited nitrides [J].
Kajikawa, Y ;
Noda, S ;
Komiyama, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (06) :1943-1954
[40]   Correlation between structure, stress and deposition parameters in direct current sputtered zinc oxide films [J].
Kappertz, O ;
Drese, R ;
Wuttig, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2002, 20 (06) :2084-2095