Mapping the spatial distribution of charge carriers in LaAlO3/SrTiO3 heterostructures

被引：363

作者：

Basletic, M. ^{[1
]}

Maurice, J. -L. ^{[1
]}

Carretero, C. ^{[1
]}

Herranz, G. ^{[1
]}

Copie, O. ^{[1
]}

Bibes, M. ^{[1
]}

Jacquet, E. ^{[1
]}

Bouzehouane, K. ^{[1
]}

Fusil, S. ^{[1
]}

Barthelemy, A. ^{[1
]}

机构：

[1] Univ Paris Sud, CNRS Thales, Unite Mixte Phys, F-91767 Palaiseau, France

来源：

NATURE MATERIALS | 2008年 / 7卷 / 08期

关键词：

D O I：

10.1038/nmat2223

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO(3)/SrTiO(3) system(1). Although this state has been predicted(2) and reported(3,4) to be confined at the interface, some studies indicate a much broader spatial extension(5), thereby questioning its origin. Here, we provide for the first time a direct determination of the carrier density profile of this system through resistance profile mappings collected in cross-section LaAlO(3)/SrTiO(3) samples with a conducting-tip atomic force microscope (CT-AFM). We find that, depending on specific growth protocols, the spatial extension of the high-mobility electron gas can be varied from hundreds of micrometres into SrTiO(3) to a few nanometres next to the LaAlO(3)/SrTiO(3) interface. Our results emphasize the potential of CT-AFM as a novel tool to characterize complex oxide interfaces and provide us with a definitive and conclusive way to reconcile the body of experimental data in this system.

引用

页码：621 / 625

页数：5

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