The role of source and drain material in the performance of GIZO based thin-film transistors

被引：32

作者：

Barquinha, P. ^{[1
,2
]}

Vila, A. ^{[3
]}

Goncalves, G. ^{[1
,2
]}

Pereira, L. ^{[1
,2
]}

Martins, R. ^{[1
,2
]}

Morante, J. ^{[3
]}

Fortunato, E. ^{[1
,2
]}

机构：

[1] Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT 13N, P-2829516 Caparica, Portugal

[2] Univ Nova Lisboa, CEMOP, P-2829516 Caparica, Portugal

[3] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2008年 / 205卷 / 08期

关键词：

D O I：

10.1002/pssa.200778940

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1905 / 1909

页数：5

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