High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding

被引：128

作者：

Chen, Long ^{[1
]}

Dong, Po ^{[1
]}

Lipson, Michal ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 15期

关键词：

D O I：

10.1364/OE.16.011513

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate germanium photodetectors integrated on submicron silicon waveguides fabricated with a low temperature (<= 400 degrees C) wafer bonding and ion-cut process. The devices shows a low dark current of similar to 100 nA, a fiber accessed responsivity of > 0.4 A/W and an estimated quantum efficiency of above 90%. (C) 2008 Optical Society of America.

引用

页码：11513 / 11518

页数：6

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