Photo-induced anomalous Hall effect in GaAs:MnAs granular films

被引:6
作者
Ogawa, T
Shuto, Y
Ueda, K
Tanaka, M
机构
[1] Japan Sci & Technol Corp, PRESTO, Kawaguchi, Saitama 3320012, Japan
[2] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan
关键词
GaAs; MnAs; granular film; photo-induced anomalous Hall effect;
D O I
10.1016/j.physe.2003.11.167
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigated the temperature-dependent Hall resistance and magnetization of the semiconductor/ferromagnetic hybrid structure of GaAs:MnAs granular films under dark and laser irradiated conditions. Under the laser irradiation with the energy above the band gap energy of GaAs, negative large Hall resistance due to the anomalous Hall effect was observed below the blocking temperature T-b of the MnAs clusters. The intrinsic photo-induced magnetization of the MnAs clusters was, however, hardly observed. These results indicate that the blocking phenomena correlate with the photo-induced anomalous Hall resistance of the GaAs:MnAs granular films. Therefore, the magnetic interaction between the photo-induced carriers and the blocked magnetization of the MnAs clusters plays an important role in the photo-induced phenomena in the GaAs:MnAs granular films. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:1041 / 1045
页数:5
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