Fe-based magnetic-semiconductor hybrid structures for photocarrier-induced magnetism

被引：31

作者：

Haneda, S

Munekata, H

Takatani, Y

Koshihara, S

机构：

[1] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Dept Solid State Phys, Meguro Ku, Tokyo 1528550, Japan

[3] Japan Sci & Technol Corp, PRESTO, Kyoto, Japan

[4] Kanagawa Acad Sci & Technol, Kanagawa, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.372733

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Preparation of GaAs-Fe composite structures has been studied by molecular-beam epitaxy. Enhanced magnetization has been observed under the red-light irradiation at 160 K. Through the study of both magnetization and magnetotransport characteristics, we believe that enhanced magnetization is strongly related to the interaction between photogenerated carriers and magnetic inclusions. (C) 2000 American Institute of Physics. [S0021-8979(00)19408-3].

引用

页码：6445 / 6447

页数：3

共 9 条

[1] Preparation and characterization of Fe-based III-V diluted magnetic semiconductor (Ga, Fe)As [J].