Converse magnetoelectric coupling in multilayer capacitors

被引：27

作者：

Israel, C. ^{[1
]}

Kar-Narayan, S. ^{[1
]}

Mathur, N. D. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci, Cambridge CB2 3QZ, England

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 17期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.3009565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report electrically induced changes of 20% in both the remnant magnetization and the coercive field of a magnetoelectric heterostructure. This heterostructure is an industrially produced multilayer capacitor comprising Ni-based magnetostrictive electrodes sandwiching a BaTiO3-based dielectric that is ferroelectric and therefore piezoelectric. Both magnetization and strain are shown to be hysteretic with applied electric field. These inexpensive capacitors might find use as electrically controlled ferromagnets. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3009565]

引用

页数：3

共 28 条

[1] Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films [J].

Bea, H. ;

Bibes, M. ;

Cherifi, S. ;

Nolting, F. ;

Warot-Fonrose, B. ;

Fusil, S. ;

Herranz, G. ;

Deranlot, C. ;

Jacquet, E. ;

Bouzehouane, K. ;

Barthelemy, A. .

APPLIED PHYSICS LETTERS, 2006, 89 (24)

[2] Magnetoelectric switching of exchange bias [J].

Borisov, P ;

Hochstrat, A ;

Chen, X ;

Kleemann, W ;

Binek, C .

PHYSICAL REVIEW LETTERS, 2005, 94 (11)

[3] Voltage assisted magnetic switching in Co50Fe50 interdigitated electrodes on piezoelectric substrates [J].

Boukari, H. ;

Cavaco, C. ;

Eyckmans, W. ;

Lagae, L. ;

Borghs, G. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)

[4] THE ELECTROMECHANICAL BEHAVIOR OF BATIO3 SINGLE-DOMAIN CRYSTALS [J].

CASPARI, ME ;

MERZ, WJ .

PHYSICAL REVIEW, 1950, 80 (06) :1082-1089

[5]

Chikazumi S., 1997, PHYS FERROMAGNETISM

[6] Magnetoelectric coupling in epitaxial CoFe2O4 on BaTiO3 [J].

Chopdekar, R. V. ;

Suzuki, Y. .

APPLIED PHYSICS LETTERS, 2006, 89 (18)

[7] Electric-field control of local ferromagnetism using a magnetoelectric multiferroic [J].

Chu, Ying-Hao ;

Martin, Lane W. ;

Holcomb, Mikel B. ;

Gajek, Martin ;

Han, Shu-Jen ;

He, Qing ;

Balke, Nina ;

Yang, Chan-Ho ;

Lee, Donkoun ;

Hu, Wei ;

Zhan, Qian ;

Yang, Pei-Ling ;

Fraile-Rodriguez, Arantxa ;

Scholl, Andreas ;

Wang, Shan X. ;

Ramesh, R. .

NATURE MATERIALS, 2008, 7 (06) :478-482

[8] Reversible magnetic domain-wall motion under an electric field in a magnetoelectric thin film [J].

Chung, Tien-Kan ;

Carman, Gregory P. ;

Mohanchandra, Kotekar P. .

APPLIED PHYSICS LETTERS, 2008, 92 (11)

[9] Large electric polarization and exchange bias in multiferroic BiFeO3 [J].

Dho, Joonghoe ;

Qi, Xiaoding ;

Kim, Hyunho ;

MacManus-Driscoll, Judith L. ;

Blamire, Mark G. .

ADVANCED MATERIALS, 2006, 18 (11) :1445-+

[10] Tailoring magnetic anisotropy at the ferromagnetic/ferroelectric interface [J].

Duan, Chun-Gang ;

Velev, Julian P. ;

Sabirianov, R. F. ;

Mei, W. N. ;

Jaswal, S. S. ;

Tsymbal, E. Y. .

APPLIED PHYSICS LETTERS, 2008, 92 (12)

← 1 2 3 →