Modeling and characterization of organic thin film transistors for circuit design

被引:45
作者
Fadlallah, M.
Benzarti, W.
Billiot, G.
Eccleston, W.
Barclay, D.
机构
[1] CEA, LETI, F-38054 Grenoble, France
[2] Univ Liverpool, Dept Elect Engn, Liverpool L69 3GJ, Merseyside, England
[3] Plast Log Ltd, Cambridge CB4 OFX, England
关键词
D O I
10.1063/1.2197260
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, we develop a device model of an organic thin film transistor for a circuit design, more specifically, for organic radio frequency identification applications. This model is based on variable range hopping theory, i.e., a carrier may either hop over a small distance with a high activation energy or hop over a long distance with a low activation energy. The model takes into account all the operating regimes in direct current and transient mode; the transistor symmetry is also considered. The model has been developed using a physical basis where the model parameters can easily be extracted and it improves convergence in circuit simulations. It is also suitable for computer aided design applications. (c) 2006 American Institute of Physics.
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页数:7
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