High-performance solution-processed triisopropylsilylethynyl pentacene transistors and inverters fabricated by using the selective self-organization technique

被引：32

作者：

Kim, Se Hyun ^{[1
]}

Choi, Danbi ^{[1
]}

Chung, Dae Sung ^{[1
]}

Yang, Chanwoo ^{[1
]}

Jang, Jaeyoung ^{[1
]}

Park, Chan Eon ^{[1
]}

Park, Sang-Hee Ko ^{[2
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Chem Engn, POSTECH Organ Elect Lab, Pohang 790784, South Korea

[2] Elect & Telecommun Res Inst, Transparent Elect Team, Taejon 305350, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 11期

关键词：

D O I：

10.1063/1.2987419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To obtain selectively self-organized active layers of organic field-effect transistors (OFETs) and inverters from a solution-phased triisopropylsilylethynyl pentacene (TIPS-PEN) semiconductor, we locally patterned an oxide dielectric, covered with a hydrophobic fluoropolymer, using O-2 plasma etching. Drop-cast TIPS-PEN molecules were selectively crystallized on the O-2-plasma-etched area, where a hydrophilic oxide surface was produced. Modification of the patterned oxide dielectrics with hexamethyldisilazane led to a field-effect mobility of the TIPS-PEN OFETs of 0.185 cm(2) V-1 s(-1), a substhreshold swing of 0.738 V/decade and an on/off ratio of 10(7). Moreover, an inverter composed of two of these OFETs showed good device operation and inverter gain of 5.6. (c) 2008 American Institute of Physics.

引用

页数：3

共 18 条

[11] Low-leakage polymeric thin-film transistors fabricated by laser assisted lift-off technique [J].