Analysis of threshold current density and optical gain in InGaAsP quantum well lasers

被引：18

作者：

Pikhtin, NA ^{[1
]}

Sliptchenko, SO ^{[1
]}

Sokolova, ZN ^{[1
]}

Tarasov, IS ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2002年 / 36卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1461415

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Single-mode and multimode quantum well (QW) laser diodes with emission wavelengths lambda = 1.0 and 1.58 mum, based on MOCVD-grown separate-confinement heterostructures, have been studied. An analysis of the threshold current density and optical gain is made on the basis of experimental dependences of the threshold current and differential quantum efficiency on the cavity length. The threshold current is decomposed into principal components in terms of model approximations taking into account the Auger recombination, ejection of electrons from QWs into waveguide layers, and lateral current spreading to passive regions of a mesa-stripe laser. (C) 2002 MAIK "Nauka/Interperiodica".

引用

页码：344 / 353

页数：10

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