Influence of nitrogen additions on hot-filament chemical vapor deposition of diamond

被引:91
作者
Bohr, S
Haubner, R
Lux, B
机构
[1] Institute for Chemical Technology of Inorganic Materials, Technical University Vienna, Getreidemarkt 9/161
关键词
D O I
10.1063/1.115717
中图分类号
O59 [应用物理学];
学科分类号
摘要
The influence of N-2 additions (5%-40% N-2/CH4) on various features of hot-filament chemical vapor deposition (CVD) of diamond layers is presented and discussed using experimental results and calculations of the thermodynamic equilibrium. Small N-2 additions (5%-10% N-2/CH4) improved the diamond phase purity but led surprisingly either to an increase or decrease of the growth rate depending upon the filament temperature. The effects are attributed to a reduction of carbon supersaturation due to an abstraction of adsorbed hydrogen atoms caused by CN and HCN. Higher N-2 additions (20%-40% N-2/CH4) revealed a deterioration of the diamond phase purity and reversal growth rates. These results are probably caused by a beginning reconstruction of the diamond surface which is originated from enhanced abstraction of adsorbed hydrogen and the inefficiency of CN or nitrogen species to stabilize the diamond surface structure. (C) 1996 American Institute of Physics.
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页码:1075 / 1077
页数:3
相关论文
共 14 条
[11]   SYNTHESIS OF DIAMONDS BY USE OF MICROWAVE PLASMA CHEMICAL-VAPOR DEPOSITION - MORPHOLOGY AND GROWTH OF DIAMOND FILMS [J].
KOBASHI, K ;
NISHIMURA, K ;
KAWATE, Y ;
HORIUCHI, T .
PHYSICAL REVIEW B, 1988, 38 (06) :4067-4084
[12]   NITROGEN STABILIZED (100) TEXTURE IN CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS [J].
LOCHER, R ;
WILD, C ;
HERRES, N ;
BEHR, D ;
KOIDL, P .
APPLIED PHYSICS LETTERS, 1994, 65 (01) :34-36
[13]   COMPENSATION EFFECTS IN NITROGEN-DOPED DIAMOND THIN-FILMS [J].
MORT, J ;
MACHONKIN, MA ;
OKUMURA, K .
APPLIED PHYSICS LETTERS, 1991, 59 (24) :3148-3150
[14]  
1986, EKVICALC 1 21