An ''edge-on'' silicon strip detector for X-ray imaging

被引：23

作者：

Arfelli, F

Barbiellini, G

Bonvicini, V

Bravin, A

Cantatore, G

Castelli, E

DiMichiel, M

Longo, R

Olivo, A

Pani, S

Pontoni, D

Poropat, P

Prest, M

Rashevsky, A

Tromba, G

Vacchi, A

Zampa, N

机构：

[1] IST NAZL FIS NUCL,SEZ TRIESTE,TRIESTE,ITALY

[2] SOC SINCROTRONE TRIESTE,TRIESTE,ITALY

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1997年 / 44卷 / 03期

关键词：

D O I：

10.1109/23.603769

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon strip detector for the SYRMEP (SYncrotron Radiation for MEdical Physics) experiment has been designed and realised. The main features of this detector are AC-coupling through integrated coupling capacitors, DC biasing by means of a gated punch-through structure, bulk contact on the junction side through a forward-biased p(+) implant and integrated fan-in on active silicon. Results of laboratory tests of the detector parameters, allowing a thorough evaluation of the technological solutions employed, are presented. The functionality of the detectors and the charge collection linearity have been tested with different gamma sources, using hybrid, low-noise front-end electronics.

引用

收藏

页码：874 / 880

页数：7

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