Wide Bandgap Semiconductor Transistors for Microwave Power Amplifiers

被引：76

作者：

Trew, R. J. ^{[1
]}

机构：

[1] US Dept Def, Washington, DC 20305 USA

来源：

IEEE MICROWAVE MAGAZINE | 2000年 / 1卷 / 01期

关键词：

D O I：

10.1109/6668.823827

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The RF power performance of microwave amplifiers fabricated from wide bandgap semiconductor transistors was examined. Calculations were calibrated against dc and RF experimental data with excellent agreement obtained. Simulations indicate operation at elevated temperature at least up to 500°C is possible. The RF output power capability of these devices compared very favorably with the 1 W/mm available from GaAs MESFETs.

引用

页码：46 / 54

页数：9

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