Thin-Film Morphology Control in Naphthalene-Diimide-Based Semiconductors: High Mobility n-Type Semiconductor for Organic Thin-Film Transistors

被引:305
作者
Shukla, Deepak [1 ]
Nelson, Shelby F. [1 ]
Freeman, Diane C. [1 ]
Rajeswaran, Manju [1 ]
Ahearn, Wendy G. [1 ]
Meyer, Dianne M. [1 ]
Carey, Jeffrey T. [1 ]
机构
[1] Eastman Kodak Co, Kodak Res Labs, Rochester, NY 14650 USA
关键词
D O I
10.1021/cm802071w
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In organic thin film transistors (OTFT), the morphology and microstructure of an organic thin film has a strong impact on the charge carrier mobility and device characteristics. To have well-defined and predictable thin film morphology, it is necessary to adapt the basic structure of semiconducting molecules in a way that results in an optimum crystalline packing motif. Here we introduce a new molecular design feature for organic semiconductors that provides the optimized crystalline packing and thin film morphology that is essential for efficient charge-carrier transport. Thus, cyclohexyl end groups in naphthalene diimide assist in directing intermolecular stacking leading to a dramatic improvement in field effect mobility. Accordingly, OTFT devices prepared with vapor deposited N,N'-bis(cyclohexyl) naphthalene-1,4,5,8-bis(dicarboximide) (1) regularly exhibit field effect mobility near 6 cm(2)/(V s), which is one of the highest carrier mobilities reported for either n- or p-type organic semiconducting thin films.
引用
收藏
页码:7486 / 7491
页数:6
相关论文
共 25 条
[1]   Variable temperature film and contact resistance measurements on operating n-channel organic thin film transistors [J].
Chesterfield, RJ ;
McKeen, JC ;
Newman, CR ;
Frisbie, CD ;
Ewbank, PC ;
Mann, KR ;
Miller, LL .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) :6396-6405
[2]   Organic thin film transistors based on N-alkyl perylene diimides:: Charge transport kinetics as a function of gate voltage and temperature [J].
Chesterfield, RJ ;
McKeen, JC ;
Newman, CR ;
Ewbank, PC ;
da Silva, DA ;
Brédas, JL ;
Miller, LL ;
Mann, KR ;
Frisbie, CD .
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (50) :19281-19292
[3]   General observation of n-type field-effect behaviour in organic semiconductors [J].
Chua, LL ;
Zaumseil, J ;
Chang, JF ;
Ou, ECW ;
Ho, PKH ;
Sirringhaus, H ;
Friend, RH .
NATURE, 2005, 434 (7030) :194-199
[4]  
Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO
[5]  
2-9
[6]   Semiconductors for organic transistors [J].
Facchetti, Antonio .
MATERIALS TODAY, 2007, 10 (03) :28-37
[7]   Structural characterization of a pentacene monolayer on an amorphous SiO2 substrate with grazing incidence X-ray diffraction [J].
Fritz, SE ;
Martin, SM ;
Frisbie, CD ;
Ward, MD ;
Toney, MF .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2004, 126 (13) :4084-4085
[8]   STRUCTURES OF 11 PERYLENE-3,4-9,10-BIS(DICARBOXIMIDE) PIGMENTS [J].
HADICKE, E ;
GRASER, F .
ACTA CRYSTALLOGRAPHICA SECTION C-CRYSTAL STRUCTURE COMMUNICATIONS, 1986, 42 :189-195
[9]   Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors [J].
Horowitz, G ;
Hajlaoui, ME ;
Hajlaoui, R .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :4456-4463
[10]  
Horowitz G., 2005, IPAP C SERIES, V6, P125