Photoluminescence linewidth of self-organized In0.4Ga0.6As/GaAs quantum dots grown on InGaAlAs stressor dots

被引：9

作者：

Krishna, S ^{[1
]}

Linder, K ^{[1
]}

Bhattacharya, P ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 08期

关键词：

D O I：

10.1063/1.371421

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The molecular beam epitaxial growth of self-organized In0.4Ga0.6As/GaAs quantum dots on buried InGaAsAs/GaAs stressor dots has been characterized by photoluminescence measurements and cross-sectional transmission electron microscopy. The presence of the stressor dots enhances the growth rate and spatial uniformity of the In0.4Ga0.6As dots. The incorporation of Al in the stressor dots not only provides a strain field, but also inhibits carrier recombination therein. A low photoluminescence linewidth of 21 meV, almost invariant in the temperature range of 7-100 K was measured in a heterostructure with an optimal number of stressor and active dot layers. (C) 1999 American Institute of Physics. [S0021-8979(99)05020-3].

引用

页码：4691 / 4693

页数：3

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