A selective epitaxial SiGe/Si planar photodetector for Si-based OEIC's

被引：15

作者：

Tashiro, T ^{[1
]}

Tatsumi, T ^{[1
]}

Sugiyama, M ^{[1
]}

Hashimoto, T ^{[1
]}

Morikawa, T ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECT RES LABS,IBARAKI 305,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 04期

关键词：

D O I：

10.1109/16.563356

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A P-i-N SiGe/Si superlattice photodetector with a planar structure has been developed for Si-based opto-electronic integrated circuits, To make the planar structure, a novel SiGe/Si selective epitaxial growth technology which uses cold wall ultra-high-vacuum/chemical vapor deposition has been newly developed, The P-i-N planar SiGe/Si photodetector has an undoped 30-Angstrom Si0.9Ge0.1/320-Angstrom Si, 30 periods, superlattice absorption layer, a 0.1-mu m P-Si buffer layer, and a 0.2-mu m P+-Si contact layer on a bonded silicon-on-insulator (SOI). The bonded SOI is used to increase the external quantum efficiency (eta(ext)) of the photodetector, Moreover, a 63-mu m deep/128-mu m wide trench, to achieve simple and stable coupling of an optical fiber to the photodetector, is formed in the silicon chip. The P-i-N planar photodetector exhibits a high eta(ext) of 25-29% with a low dark current of 0.5 pA/mu m(2) and a high-frequency photo response of 10.5 GHz at lambda = 0.98 mu m.

引用

页码：545 / 550

页数：6

共 19 条

[1] LIMITATIONS OF SELECTIVE EPITAXIAL-GROWTH CONDITIONS IN GAS-SOURCE MBE USING SI2H6 [J].