Electrically detected and microwave-modulated Shubnikov-de Haas oscillations in an Al0.4Ga0.6N/GaN heterostructure

被引：27

作者：

Hang, DR ^{[1
]}

Liang, CT

Juang, JR

Huang, TY

Hung, WK

Chen, YF

Kim, GH

Lee, JH

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[2] Sungkyunkwan Univ, Dept Elect & Elect Engn, Suwon 440746, South Korea

[3] Kyungpook Natl Univ, Sch Elect & Elect Engn, Taegu 702701, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 04期

关键词：

D O I：

10.1063/1.1539286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the drastic enhancement pattern of Shubnikov-de Haas (SdH) oscillations observed in an AlGaN/GaN heterostructure by microwave modulation. The dependence of the SdH pattern on microwave power and temperature is investigated. The underlying mechanism is attributed to the effect of carrier heating. This technique helps study the transport properties of two-dimensional electrons in many wide-band-gap heterostructures, in which moderate mobilities and heavier electron effective mass (rapidly damping SdH amplitudes) are frequently encountered. In addition, this method has the advantage of keeping the carrier concentration fixed and not requiring expensive high-energy laser facilities compared with carrier-modulated SdH measurements. (C) 2003 American Institute of Physics.

引用

页码：2055 / 2058

页数：4

共 15 条

[1] Determination of significant transport parameters of two-dimensional electron gas systems by microwave methods [J].