Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction

被引：40

作者：

Hang, DR ^{[1
]}

Liang, CT

Huang, CF

Chang, YH

Chen, YF

Jiang, HX

Lin, JY

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[2] Kansas State Univ, Dept Phys, Manhattan, KS 66505 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 01期

关键词：

D O I：

10.1063/1.1380245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have performed a magnetotransport study on an AlGaN/GaN heterostructure at low temperatures. The effective-mass values have been evaluated by analyzing the exact form of the temperature-dependent Shubnikov-de Haas oscillation function. The values obtained increase with the magnetic field. This mass enhancement is attributed to conduction-band nonparabolicity. The effective-mass variation with the magnetic field was extrapolated to zero field, together with further correction due to the triangular confinement of the carriers, yielding an effective mass of 0.185 +/-0.005 of the free-electron mass. Our result is in excellent agreement with the results obtained by first-principle calculations and the tight-binding method, and suggest the significance of magnetic-field-induced nonparabolicity in transport measurements. (C) 2001 American Institute of Physics.

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页码：66 / 68

页数：3

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