Effective g* factor of two-dimensional electrons in GaN/AlGaN heterojunctions

被引：38

作者：

Knap, W ^{[1
]}

Frayssinet, E

Sadowski, ML

Skierbiszewski, C

Maude, D

Falko, V

Khan, MA

Shur, MS

机构：

[1] Univ Montpellier 2, GES, F-34095 Montpellier, France

[2] CNRS, UMR 5650, F-34095 Montpellier, France

[3] Polish Acad Sci, UNIPRESS, High Pressure Res Ctr, PL-01142 Warsaw, Poland

[4] MPI, Grenoble High Magnet Field Lab, CNRS, F-38000 Grenoble, France

[5] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[6] Univ S Carolina, Dept Elect & Comp Engn, Columbia, SC 29208 USA

[7] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 20期

关键词：

D O I：

10.1063/1.125262

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conduction band parameters of two-dimensional (2D) electrons in high density GaN/AlGaN heterojunctions were studied using the cyclotron resonance and magnetotransport techniques in high magnetic fields (24 T) and low temperatures (300 mK). The Landau level splitting determined from the cyclotron resonance experiment yielded the effective mass of 2D carriers, m* = 0.242 +/- 0.002 m(0). The Lande g factor for the 2D electrons (g = 2.06 +/- 0.04) was determined from the angular dependence of the amplitude of Shubnikov-de-Haas oscillations experiments in tilted magnetic field. (C) 1999 American Institute of Physics. [S0003-6951(99)00845-1].

引用

页码：3156 / 3158

页数：3

共 13 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[2] THEORY OF CYCLOTRON-RESONANCE LINESHAPE IN A 2-DIMENSIONAL ELECTRON-SYSTEM [J].

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 38 (04) :989-997

[3]

BAKER AS, 1973, PHYS REV B, V7, P743

[4]

BYCHKOV YA, 1984, JETP LETT+, V39, P78

[5] ELECTRON-SPIN-RESONANCE STUDIES OF DONORS IN WURTZITE GAN [J].

CARLOS, WE ;

FREITAS, JA ;

KHAN, MA ;

OLSON, DT ;

KUZNIA, JN .

PHYSICAL REVIEW B, 1993, 48 (24) :17878-17884

[6]

COLDRIDGE PT, 1991, PHYS REV B, V44, P3793

[7] DETERMINATION OF THE CONDUCTION-BAND ELECTRON EFFECTIVE-MASS IN HEXAGONAL GAN [J].

DRECHSLER, M ;

HOFMANN, DM ;

MEYER, BK ;

DETCHPROHM, T ;

AMANO, H ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (9B) :L1178-L1179

[8] OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION [J].

GLASER, ER ;

KENNEDY, TA ;

DOVERSPIKE, K ;

ROWLAND, LB ;

GASKILL, DK ;

FREITAS, JA ;

KHAN, MA ;

OLSON, DT ;

KUZNIA, JN ;

WICKENDEN, DK .

PHYSICAL REVIEW B, 1995, 51 (19) :13326-13336

[9] OBSERVATION OF A 2-DIMENSIONAL ELECTRON-GAS IN LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITED GAN-ALXGA1-XN HETEROJUNCTIONS [J].

KHAN, MA ;

KUZNIA, JN ;

VANHOVE, JM ;

PAN, N ;

CARTER, J .

APPLIED PHYSICS LETTERS, 1992, 60 (24) :3027-3029

[10] The cyclotron resonance effective mass of two-dimensional electrons confined at the GaN/AlGaN interface [J].

Knap, W ;

Alause, H ;

Bluet, JM ;

Camassel, J ;

Young, J ;

Khan, MA ;

Chen, Q ;

Huant, S ;

Shur, M .

SOLID STATE COMMUNICATIONS, 1996, 99 (03) :195-199

← 1 2 →