Influence of the erbium and oxygen content on the electroluminescence of epitaxially grown erbium-doped silicon diodes

被引：35

作者：

Reittinger, A

Stimmer, J

Abstreiter, G

机构：

[1] Walter Schottky Institut, TU München, D-85748 Garching, Am Coulombwall

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 18期

关键词：

D O I：

10.1063/1.118893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electroluminescence behavior of erbium-oxygen-doped silicon light emitting diodes grown by molecular beam epitaxy was studied for a fixed oxygen to erbium concentration ratio of about six. The diodes were operated in reverse bias. An increase of the erbium and oxygen content leads to a stronger erbium intensity at 5 K up to an erbium concentration of 1.5 x 10(20) cm(-3), an enhanced decrease of the erbium intensity with higher temperatures, and a shift of the temperature quenching, onset to lower temperatures. The strongest erbium electroluminescence emission in reverse bias in this set of samples was obtained from annealed Si:Er-diodes doped with concentrations of 5 x 10(19), or 1.5 x 10(20) cm(-3) erbium and 3 x 10(20) Or 3 x 10(21) cm(-3) oxygen, respectively. Electroluminescence emission due to erbium was detected up to 440 K. (C) 1997 American Institute of Physics.

引用

收藏

页码：2431 / 2433

页数：3

相关论文

共 12 条

[1] LOCAL-STRUCTURE OF 1.54-MU-M-LUMINESCENCE ER-3+ IMPLANTED IN SI [J].

ADLER, DL ;

JACOBSON, DC ;

EAGLESHAM, DJ ;

MARCUS, MA ;

BENTON, JL ;

POATE, JM ;

CITRIN, PH .

APPLIED PHYSICS LETTERS, 1992, 61 (18) :2181-2183

[2] Materials issues and device performances for light emitting Er-implanted Si [J].

Coffa, S ;

Priolo, F ;

Franzo, G ;

Polman, A ;

Libertino, S ;

Saggio, M ;

Carnera, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 106 (1-4) :386-392

[3] OPTICAL ACTIVATION AND EXCITATION MECHANISMS OF ER IMPLANTED IN SI [J].

COFFA, S ;

PRIOLO, F ;

FRANZO, G ;

BELLANI, V ;

CARNERA, A ;

SPINELLA, C .

PHYSICAL REVIEW B, 1993, 48 (16) :11782-11788

[4] TEMPERATURE-DEPENDENCE AND QUENCHING PROCESSES OF THE INTRA-4F LUMINESCENCE OF ER IN CRYSTALLINE SI [J].

COFFA, S ;

FRANZO, G ;

PRIOLO, F ;

POLMAN, A ;

SERNA, R .

PHYSICAL REVIEW B, 1994, 49 (23) :16313-16320

[5] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

ENNEN, H ;

POMRENKE, G ;

AXMANN, A ;

EISELE, K ;

HAYDL, W ;

SCHNEIDER, J .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :381-383

[6] ROOM-TEMPERATURE ELECTROLUMINESCENCE FROM ER-DOPED CRYSTALLINE SI [J].

FRANZO, G ;

PRIOLO, F ;

COFFA, S ;

POLMAN, A ;

CARNERA, A .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2235-2237

[7] Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE [J].

Jaumann, M ;

Stimmer, J ;

Schittenhelm, P ;

Nutzel, JF ;

Abstreiter, G ;

Neufeld, E ;

Hollander, B ;

Buchal, C .

APPLIED SURFACE SCIENCE, 1996, 102 :327-330

[8] IMPURITY ENHANCEMENT OF THE 1.54-MU-M ER3+ LUMINESCENCE IN SILICON [J].

MICHEL, J ;

BENTON, JL ;

FERRANTE, RF ;

JACOBSON, DC ;

EAGLESHAM, DJ ;

FITZGERALD, EA ;

XIE, YH ;

POATE, JM ;

KIMERLING, LC .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) :2672-2678

[9] INCORPORATION OF HIGH-CONCENTRATIONS OF ERBIUM IN CRYSTAL SILICON [J].

POLMAN, A ;

CUSTER, JS ;

SNOEKS, E ;

VANDENHOVEN, GN .

APPLIED PHYSICS LETTERS, 1993, 62 (05) :507-509

[10] Electroluminescence of erbium-oxygen-doped silicon diodes grown by molecular beam epitaxy [J].

Stimmer, J ;

Reittinger, A ;

Nutzel, JF ;

Abstreiter, G ;

Holzbrecher, H ;

Buchal, C .

APPLIED PHYSICS LETTERS, 1996, 68 (23) :3290-3292