Silicon nano-wires fabricated by thermal evaporation of silicon wafer

被引：12

作者：

Niu, JJ

Sha, J

Liu, ZH

Su, ZX

Yu, J

Yang, DR ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 24卷 / 3-4期

基金：

中国国家自然科学基金;

关键词：

nano-wires; silicon; thermal evaporation;

D O I：

10.1016/j.physe.2004.04.040

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin silicon nano-wires (SiNWs) with a diameter of similar to 10-20 nm were fabricated by a simple thermal evaporation of silicon wafer at 1523 K. The gold produced by an electrochemical method was covered on the wafer surface as catalyst. It was found that the SiNWs are amorphous and its Raman peak shifted down maybe due to the effect of laser heating and quantum confinement. Finally, a temperature gradient growth model is suggested to explain the growth direction of SiNWs. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：268 / 271

页数：4

共 22 条

[1] Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].