Silicon quantum-wires arrays synthesized by chemical vapor deposition and its micro-structural properties

被引：26

作者：

Lu, M

Li, MK

Kong, LB

Guo, XY

Li, HL ^{[1
]}

机构：

[1] Lanzhou Univ, Dept Chem, Lanzhou 730000, Peoples R China

[2] Henan Univ, Lab Special Funct Mat, Kaifeng 475001, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2003年 / 374卷 / 5-6期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/S0009-2614(03)00747-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Well-aligned arrays of silicon nanowires (SiNWs) have been synthesized by a chemical vapor deposition (CVD) template method without catalyst. The micro-structures of the SiNWs were studied by high-resolution transmission electron microscopy (HRTEM). Selected-area electron diffraction (SAED) and X-ray diffraction (XRD) indicate that each nanowire is essentially a single crystal and has a different orientation in an array. According to VLS mechanism, the growth of SiNWs without catalyst is related to the structure of template. The superior field emission behavior is believed to result from the oriented growth and the sharp tips of SiNWs. (C) 2003 Elsevier Science B.V. All rights reserved.

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页码：542 / 547

页数：6

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