Growth of amorphous silicon nanowires

被引：40

作者：

Liu, ZQ ^{[1
]}

Zhou, WY ^{[1
]}

Sun, LF ^{[1
]}

Tang, DS ^{[1
]}

Zou, XP ^{[1
]}

Li, YB ^{[1
]}

Wang, CY ^{[1
]}

Wang, G ^{[1
]}

Xie, SS ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Ctr Condensed Matter Phys, Grp 412, Beijing 100080, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2001年 / 341卷 / 5-6期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/S0009-2614(01)00513-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have grown vertically aligned amorphous silicon nanowires on Au-Pd co-deposition silicon oxide substrate by thermal chemical vapor deposition using SiH4 gas at 800 degreesC. The diameter of silicon nanowires is in the range 10-50 nm and the length is about 1 mum. Transmission electron microscopy (TEM) observations show that the grown silicon nanowires are of an amorphous state and some of nanowires appear to bifurcate in the vertically growth process. The effect of Hz gas etchings on the catalytic size and the effect of catalytic size on the formation of the vertical growth nanowires are discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：523 / 528

页数：6

共 20 条

[1] BORON-NITRIDE NANOTUBES [J].

CHOPRA, NG ;

LUYKEN, RJ ;

CHERREY, K ;

CRESPI, VH ;

COHEN, ML ;

LOUIE, SG ;

ZETTL, A .

SCIENCE, 1995, 269 (5226) :966-967

[2] MORPHOLOGY AND POLARITY OF GAAS NEEDLES [J].

FUJII, M ;

IWANAGA, H ;

SHIBATA, N .

JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) :179-182

[3] QUANTUM SIZE MICROCRYSTALS GROWN USING ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

HIRUMA, K ;

KATSUYAMA, T ;

OGAWA, K ;

KOGUCHI, M ;

KAKIBAYASHI, H ;

MORGAN, GP .

APPLIED PHYSICS LETTERS, 1991, 59 (04) :431-433

[4] HELICAL MICROTUBULES OF GRAPHITIC CARBON [J].

IIJIMA, S .

NATURE, 1991, 354 (6348) :56-58

[5] Self-organized growth of Fe nanowire array on H2O/Si(100)(2 x n) [J].

Kida, A ;

Kajiyama, H ;

Heike, S ;

Hashizume, T ;

Koike, K .

APPLIED PHYSICS LETTERS, 1999, 75 (04) :540-542

[6] Large-scale synthesis of aligned carbon nanotubes [J].

Li, WZ ;

Xie, SS ;

Qian, LX ;

Chang, BH ;

Zou, BS ;

Zhou, WY ;

Zhao, RA ;

Wang, G .

SCIENCE, 1996, 274 (5293) :1701-1703

[7]

LIU H, 1995, J VAC SCI TECHNOL B, V13, P2166

[8] SELF-LIMITING OXIDATION FOR FABRICATING SUB-5 NM SILICON NANOWIRES [J].

LIU, HI ;

BIEGELSEN, DK ;

PONCE, FA ;

JOHNSON, NM ;

PEASE, RFW .

APPLIED PHYSICS LETTERS, 1994, 64 (11) :1383-1385

[9] Synthesis of silicon nanowires using AuPd nanoparticles catalyst on silicon substrate [J].

Liu, ZQ ;

Pan, ZW ;

Sun, LF ;

Tang, DS ;

Zhou, WY ;

Wang, G ;

Qian, LX ;

Xie, SS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2000, 61 (07) :1171-1174

[10] A laser ablation method for the synthesis of crystalline semiconductor nanowires [J].

Morales, AM ;

Lieber, CM .

SCIENCE, 1998, 279 (5348) :208-211

← 1 2 →