MORPHOLOGY AND POLARITY OF GAAS NEEDLES

被引：11

作者：

FUJII, M ^{[1
]}

IWANAGA, H ^{[1
]}

SHIBATA, N ^{[1
]}

机构：

[1] NAGASAKI UNIV,FAC LIBERAL ARTS,NAGASAKI 852,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期

关键词：

Crystals--Structure - Etching - Microscopic Examination--Scanning Electron Microscopy - X-rays--Diffraction;

D O I：

10.1016/0022-0248(90)90508-I

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaAs needle crystals with the zincblende structure were grown by reacting a mixture of Ga and Ga2O3 with As in a closed quartz tube. The six lateral surfaces of the needles are parallel to the {112} planes. The growth axis is the [111] polar direction. Some of them changed their growth axis from one of the <111 > polar axes to another during growth. Examinations of the crystals by scanning electron microscopy and X-ray diffraction clarified the detailed morphology. The polarity of grown crystals was determined from a study of etch pits revealed on the {111} and {112} planes by an HF+H2O2 etchant. © 1990.

引用

页码：179 / 182

页数：4

共 8 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].