Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins

被引:401
作者
Nolting, F
Scholl, A
Stöhr, J
Seo, JW
Fompeyrine, J
Siegwart, H
Locquet, JP
Anders, S
Lüning, J
Fullerton, EE
Toney, MF
Scheinfein, MR
Padmore, HA
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA
[2] IBM Corp, Almaden Res Ctr, Div Res, San Jose, CA 95120 USA
[3] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland
[4] IBM Corp, Div Res, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland
[5] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
关键词
D O I
10.1038/35015515
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The arrangement of spins at interfaces in a layered magnetic material often has an important effect on the properties of the material. One example of this is the directional coupling between the spins in an antiferromagnet and those in an adjacent ferromagnet, an effect first discovered(1) in 1956 and referred to as exchange bias. Because of its technological importance for the development of advanced devices such as magnetic read heads(2) and magnetic memory cells(3), this phenomenon has received much attention(4,5). Despite extensive studies, however, exchange bias is still poorly understood, largely due to the lack of techniques capable of providing detailed information about the arrangement of magnetic moments near interfaces. Here we present polarization-dependent X-ray magnetic dichroism spectro-microscopy that reveals the micromagnetic structure on both sides of a ferromagnetic-antiferromagnetic interface. Images of thin ferromagnetic Co films grown on antiferromagnetic LaFeO3 show a direct link between the arrangement of spins in each material. Remanent hysteresis loops, recorded for individual ferromagnetic domains, show a local exchange bias. Our results imply that the alignment of the ferromagnetic spins is determined, domain by domain, by the spin directions in the underlying antiferromagnetic layer.
引用
收藏
页码:767 / 769
页数:4
相关论文
共 13 条
[1]   Photoemission electron microscope for the study of magnetic materials [J].
Anders, S ;
Padmore, HA ;
Duarte, RM ;
Renner, T ;
Stammler, T ;
Scholl, A ;
Scheinfein, MR ;
Stöhr, J ;
Séve, L ;
Sinkovic, B .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1999, 70 (10) :3973-3981
[2]   Exchange anisotropy - a review [J].
Berkowitz, AE ;
Takano, K .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 200 (1-3) :552-570
[3]   MOSSBAUER STUDIES OF FE57 IN ORTHOFERRITES [J].
EIBSCHUTZ, M ;
SHTRIKMAN, S ;
TREVES, D .
PHYSICAL REVIEW, 1967, 156 (02) :562-+
[4]   BLOCK-BY-BLOCK DEPOSITION - A NEW GROWTH METHOD FOR COMPLEX OXIDE THIN-FILMS [J].
LOCQUET, JP ;
CATANA, A ;
MACHLER, E ;
GERBER, C ;
BEDNORZ, JG .
APPLIED PHYSICS LETTERS, 1994, 64 (03) :372-374
[5]   Doubling the critical temperature of La1.9Sr0.1CuO4 using epitaxial strain [J].
Locquet, JP ;
Perret, J ;
Fompeyrine, J ;
Mächler, E ;
Seo, JW ;
Van Tendeloo, G .
NATURE, 1998, 394 (6692) :453-456
[6]   NEW MAGNETIC ANISOTROPY [J].
MEIKLEJOHN, WH ;
BEAN, CP .
PHYSICAL REVIEW, 1956, 102 (05) :1413-1414
[7]   Exchange bias [J].
Nogués, J ;
Schuller, IK .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 192 (02) :203-232
[8]   Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) [J].
Parkin, SSP ;
Roche, KP ;
Samant, MG ;
Rice, PM ;
Beyers, RB ;
Scheuerlein, RE ;
O'Sullivan, EJ ;
Brown, SL ;
Bucchigano, J ;
Abraham, DW ;
Lu, Y ;
Rooks, M ;
Trouilloud, PL ;
Wanner, RA ;
Gallagher, WJ .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :5828-5833
[9]   Observation of antiferromagnetic domains in epitaxial thin films [J].
Scholl, A ;
Stöhr, J ;
Lüning, J ;
Seo, JW ;
Fompeyrine, J ;
Siegwart, H ;
Locquet, JP ;
Nolting, F ;
Anders, S ;
Fullerton, EE ;
Scheinfein, MR ;
Padmore, HA .
SCIENCE, 2000, 287 (5455) :1014-1016
[10]   ELEMENT-SPECIFIC MAGNETIC MICROSCOPY WITH CIRCULARLY POLARIZED X-RAYS [J].
STOHR, J ;
WU, Y ;
HERMSMEIER, BD ;
SAMANT, MG ;
HARP, GR ;
KORANDA, S ;
DUNHAM, D ;
TONNER, BP .
SCIENCE, 1993, 259 (5095) :658-661