New materials for superconducting electronics: Epitaxial growth of LaSrGaO4 and PrSrGaO4 dielectric thin films by MOCVD

被引：2

作者：

Belot, JA ^{[1
]}

Hinds, BJ ^{[1
]}

Chen, J ^{[1
]}

Wang, YY ^{[1
]}

Dravid, V ^{[1
]}

Marks, TJ ^{[1
]}

机构：

[1] NORTHWESTERN UNIV, SCI & TECHNOL CTR SUPERCONDUCT, EVANSTON, IL 60208 USA

来源：

CHEMICAL VAPOR DEPOSITION | 1997年 / 3卷 / 02期

关键词：

D O I：

10.1002/cvde.19970030204

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

There is a critical need for improved dielectric materials as substrates, and as buffer and insulator layers for HTS devices. Here the first in situ MOCVD growth of phase-pure, epitaxially oriented YBCO lattice matched, low dielectric constant perovskites LnSrGaO(4) (Ln = La and Pr) is described. The exclusively c-axis oriented films have an ultimate surface roughness of 3.0 and 1.0 nm for the Pr and La materials, respectively. These films exemplify the requirements which are essential for fabrication of HTS thin-film devices.

引用

页码：78 / +

页数：1

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