Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides

被引：7

作者：

Rao, EVK ^{[1
]}

Allovon, M ^{[1
]}

Rafle, Y ^{[1
]}

Juhel, M ^{[1
]}

Thibierge, H ^{[1
]}

Theys, B ^{[1
]}

Chevallier, J ^{[1
]}

机构：

[1] CNRS,PHYS SOLIDES LAB,F-92195 MEUDON,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 44卷 / 1-3期

关键词：

hydrogenation; photoluminescence; waveguides;

D O I：

10.1016/S0921-5107(96)01732-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The potentiality of H passivation in InP-based photonic device technology was investigated by evaluating the properties of hydrogenated InP (Zn)/InGaAsP double heterostructure (DHS) waveguide (WG) samples. Subsequent to plasma exposure, conventional photoluminescence (PL) measurements were employed to monitor the optical quality, and Fabry-Perot damping oscillation measurements at similar to 1.55 mu m to evaluate the propagation losses. We report here that hydrogenation significantly improves the optical quality of DHS samples and further brings about an efficient (90%) neutralization of Zn accepters in the upper p-InP confinement layer, and to a lesser extent, also of those that are involuntarily introduced into the nominally undoped InGaAsP quaternary (Q) guiding layer. These two features are shown to be profitable in photon device technology as they can be engineered to reduce propagation losses (due to free-carrier absorption) in the DHS buried WG structures. (C) 1997 Elsevier Science S.A.

引用

页码：117 / 120

页数：4

共 15 条

[1] EFFECT OF HYDROGENATION AND THERMAL ANNEALING ON THE PHOTOLUMINESCENCE OF P-INP [J].