UV absorptance of titanium dioxide thin films by plasma enhanced deposition from mixtures of oxygen and titanium-tetrakis-isopropoxide

被引:20
作者
Sonnenfeld, A
Hauert, R
von Rohr, PR [1 ]
机构
[1] ETH, Inst Proc Engn, CH-8092 Zurich, Switzerland
[2] Empa, Mat Sci & Technol, CH-8600 Dubendorf, Switzerland
关键词
titanium dioxide; plasma enhanced chemical vapour deposition (PECVD); polymeric substrate; UV absorption; XPS;
D O I
10.1007/s11090-006-9022-6
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
A low pressure radio frequency discharge was used to deposit films by mixtures of oxygen and titanium (IV) isopropoxide (TTIP) at powers of 200 W on films of polyethylene-terephthalat and samples of quartz glass. In the non-thermal plasma, films of rather pure TiO2 could be deposited as revealed by X-ray photo-electron spectroscopy. Besides the film growth rate and the chemical composition, the spectral behaviour of the spectral transmittance of visually transparent films was determined in the range from 200 to 500 nm. Furthermore, the absorptance of films has been derived at characteristic spectral positions of the transmission spectra of the films. Accordingly, cut-off wavelength was found to increase with deposition time from 5 to 10 min as well as with the concentration of TTIP in a range below 1.7%. At 310 nm, the spectral absorption coefficient (extinction coefficient x concentration) was 12 mu m(-1). While keeping other parameters constant, this coefficient decreased by 4 mu m(-1) due to an increase of the concentration of TTIP from 1.7% to 8%. Simultaneously, the surface roughness increased as revealed by profilometry. Thus, since the chemical structure of films was found to change only marginally, a decrease of the film density is likely to cause the observed dependence of the absorption coefficient with increasing precursor concentration.
引用
收藏
页码:319 / 334
页数:16
相关论文
共 48 条
[1]   THIN-FILMS OF METAL-OXIDES ON SILICON BY CHEMICAL VAPOR-DEPOSITION WITH ORGANOMETALLIC COMPOUNDS .1. [J].
BALOG, M ;
SCHIEBER, M ;
MICHMAN, M ;
PATAI, S .
JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :298-&
[2]   PECVD of amorphous TiO2 thin films:: effect of growth temperature and plasma gas composition [J].
Battiston, GA ;
Gerbasi, R ;
Gregori, A ;
Porchia, M ;
Cattarin, S ;
Rizzi, GA .
THIN SOLID FILMS, 2000, 371 (1-2) :126-131
[3]   Titanium dioxide (TiO2)-based gate insulators [J].
Campbell, SA ;
Kim, HS ;
Gilmer, DC ;
He, B ;
Ma, T ;
Gladfelter, WL .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1999, 43 (03) :383-392
[4]   EPITAXIAL TIO2 AND VO2 FILMS PREPARED BY MOCVD [J].
CHANG, HLM ;
YOU, H ;
GUO, J ;
LAM, DJ .
APPLIED SURFACE SCIENCE, 1991, 48-9 :12-18
[5]   Properties of titanium oxide films obtained by PECVD [J].
da Cruz, NC ;
Rangel, EC ;
Wang, JJ ;
Trasferetti, BC ;
Davanzo, CU ;
Castro, SGC ;
de Moraes, MAB .
SURFACE & COATINGS TECHNOLOGY, 2000, 126 (2-3) :123-130
[6]   TIO2 FILM PROPERTIES AS A FUNCTION OF PROCESSING TEMPERATURE [J].
FITZGIBBONS, ET ;
SLADEK, KJ ;
HARTWIG, WH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) :735-+
[7]   ELECTROCHEMICAL PHOTOLYSIS OF WATER AT A SEMICONDUCTOR ELECTRODE [J].
FUJISHIMA, A ;
HONDA, K .
NATURE, 1972, 238 (5358) :37-+
[8]   ELECTRONIC-PROPERTIES OF THE INTERFACE BETWEEN SI AND TIO2 DEPOSITED AT VERY LOW-TEMPERATURES [J].
FUYUKI, T ;
MATSUNAMI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (09) :1288-1291
[9]   Decomposition and protonation of surface ethoxys on TiO2(110) [J].
Gamble, L ;
Jung, LS ;
Campbell, CT .
SURFACE SCIENCE, 1996, 348 (1-2) :1-16
[10]  
Glocker D.A., 1995, HDB THIN FILM PROCES, V2