Design considerations for high-current photodetectors

被引：151

作者：

Williams, KJ ^{[1
]}

Esman, RD ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1999年 / 17卷 / 08期

关键词：

heating; nonlinearities; photodetectors; photodiodes; p-i-n photodiodes; semiconductor device modeling; thermal factors;

D O I：

10.1109/50.779167

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper outlines the design considerations for gigahertz-bandwidth, high-current p-i-n photodiodes utilizing In GaAs absorbers. The factors being investigated are photodetector intrinsic region length, intrinsic region doping density, temperature effects, illumination spot size, illumination wavelength, frequency, and illumination direction. Space-charge calculations are used to determine optimal device geometry and conditions which maximize saturation photocurrent, A thermal model is developed to study the effects of temperature on high-current photodetector performance. The thermal and space-charge model results are combined to emphasize the importance of thin intrinsic region lengths to obtain high current. Finally, a comparison between surface-illuminated p-i-n structures and waveguide structures is made to differentiate between the problems associated with achieving high current in each structure and to outline techniques to achieve maximum performance.

引用

页码：1443 / 1454

页数：12

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